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Samsung SSD MZ-V7E1T0BW 970 EVO NVMe M.2 1TB Internal SSD

Samsung
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$182.95

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The SSD that goes further

Accelerate into next-gen computing. The Samsung 970 EVO is designed to deliver breakthrough speeds, exceptional reliability, and a broad range of capacity options up to 2TB*. Samsung’s latest V-NAND, new Phoenix controller, and Intelligent TurboWrite technology enhance high-end gaming and 4K & 3D graphic editing.

Next level SSD speed

Feel the NVMe difference. The 970 EVO transforms high-end gaming and streamlines graphic intensive workflows with the new Phoenix controller and Intelligent TurboWrite technology. Get stunning sequential read/write speeds up to 3,500/2,500 MB/s*, which is up to 32% faster writes than the previous generation Samsung’s SSDs.

Design Flexibility

The next advancement in NVMe SSD. The 970 EVO fits up to 2TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung†s innovative technology empowers you with the capacity to do more and accomplish more.

Exceptional Endurance

The new standard in sustainable performance. Get up to 1,200 TBW* with a 5-year limited warranty, which helps to achieve 50% higher than the previous generation. The 970 EVO provides exceptional endurance powered by the latest V-NAND technology and Samsung’s quality.

Unparalleled Reliability

Achieve a new level of drive confidence. Samsung’s advanced nickel-coated controller and heat spreader on the 970 EVO is designed to enable exceptional heat dissipation. The Dynamic Thermal Guard can automatically monitor and maintain optimal operating temperatures to help minimize performance drops.

Samsung Magician

Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health and speed, and even boost performance.
Application
Client PCs
Interface
PCIe Gen 3.0 x4, NVMe 1.3
Capacity
1000GB (Actual usable capacity may be less, due to formatting, partitioning, operating system, applications or otherwise)
Form Factor
M.2 (2280)
Storage Memory
Samsung V-NAND 3-bit MLC
Controller
Samsung Phoenix Controller
Cache Memory
Samsung 1GB Low Power DDR4 SDRAM
Trim Support
Supported
Encryption Support
AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
S.M.A.R.T. Support
Supported
WWN Support
Not supported
GC (Garbage Collection)
Auto Garbage Collection Algorithm
Device Sleep Mode Support
Yes
Sequential Read Speed
Up to 3,500 MB/s (Performance may vary based on system hardware configuration)
Sequential Write Speed
Up to 2,500 MB/s (Performance may vary based on system hardware configuration)
Random Read Speed
Random Read (4KB, QD32): Up to 500,000 IOPS
Random Read (4KB, QD1): Up to 15,000 IOPS
(Performance may vary based on system hardware configuration)
Random Write Speed
Random Write (4KB, QD32): Up to 450,000 IOPS
Random Write (4KB, QD1): Up to 50,000 IOPS
(Performance may vary based on system hardware configuration)
Average Power Consumption (system level)
Average: 6 W
Maximum: 10 W (Burst mode)
(Actual power consumption may vary depending on system hardware configuration)
Power consumption (Idle)
Max. 30 mW
(Actual power consumption may vary depending on system hardware configuration)
Allowable Voltage
3.3 V +/- 5 % Allowable voltage

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